High Hot-Carrier and ESD Immunity Device for High-Voltage I/O NMOSFETs in 0.1-μm CMOS Technology
نویسندگان
چکیده
In this paper, we report the hot carrier and the ESD related device characteristics in 0.1-μm 3.3 V I/O LDD MOSFETs without hybrid (Phos. + As) typed LDD structure. In order to suggest the device guideline for the LDD and the channel doping profiles, the investigation focuses on the analysis of electrical characteristics, such as the short channel effect, the reverse short channel effect, the substrate current, the off-state leakage current, and the comparison of the electrical field with various LDD process conditions using 2-D device simulator.
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